Description
2N3055 NPN Power Transistor
TRD-126
Series: 2N3055
Product Type: BJTs – Bipolar Transistors
Transistor Polarity: NPN
Configuration: Single
Collector-Emitter Voltage VCEO Max: 60V
Collector- Base Voltage VCBO: 100V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 15 A
Pd – Power Dissipation: 115 W
Gain Bandwidth Product fT: 3 MHz
Minimum Operating Temperature: -65°C
Maximum Operating Temperature: +200°C
Continuous Collector Current: 15 A
DC Collector/Base Gain hFE Min: 20
DC Current Gain hFE Max: 70
Mounting Style: Through Hole
Package/Case: TO-3
Additional Information
| Weight | 10.28 g |
|---|
