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BCX53 - PNP Bipolar Transistor BJT 80V 1A 3Pin SOT-89 SMD-8 Manufacturer: NXP Package: SOT-89 Current – Collector Cutoff: 100nA Collector – Emitter Voltage VCEO: 80V Pd – Power Dissipation: 500mW DC Current Gain: 63@150mA,2V Current – Collector(Ic): 1A Transition frequency(fT): 50MHz Vce Saturation(VCE(sat)): 500mV Type: PNP -
BCX56 - NPN Bipolar Transistor BJT 80V 1A 3Pin SOT-89 SMD-7 Manufacturer: NXP Package: SOT-89 Current – Collector Cutoff :100nA Collector – Emitter Voltage VCEO: 100V Pd – Power Dissipation: 1.4W DC Current Gain:100@150mA,2V Current – Collector(Ic): 1A Transition frequency(Ft):100MHz Vce Saturation(VCE(sat)): 500mV Type: NPN -
D10XB80 Bridge Rectifier DID-121 Maximum Reverse Voltage: 800V Average Rectified Forward Current: 10 A -
DMP2045UQ-13-P-Channel MOSFET SOT-23-3 SMD-25 Manufacturer: DIODES Package: SOT-23-3 Drain to Source Voltage: 20V Operating Temperature: -55℃~+150℃ Current – Continuous Drain(Id): 4.3A RDS(on): 45mΩ@4.5V,4.3A Pd – Power Dissipation: 800mW Gate Threshold Voltage (Vgs(th)): 1V Reverse Transfer Capacitance (Crss@Vds): 66pF@10V Number: 1 P-Channel Input Capacitance(Ciss): 634pF@10V Gate Charge(Qg): 6.8Nc -
DMP31D1U-7-P-Channel MOSFET SOT-23-3 SMD-26 Manufacturer: DIODES Package: SOT-23-3 Drain to Source Voltage: 30V Current – Continuous Drain(Id): 620mA RDS(on): 2Ω@1.8V Type: P-Channel Pd – Power Dissipation: 580mW Gate Threshold Voltage (Vgs(th)): 1.1V@250uA Gate Charge(Qg): 1.6n -
ESD9B5.0ST5G - 5V 26 Watt ESD Protection Diode - SOD-923 Package SMD-37 Working Voltage: 5V Breakdown Voltage: 5.8V Peak Pulse Current: 1A Low Capacitance 15 Pf Low Clamping Voltage Small Body Outline Dimensions: 0.039″ x 0.024″ (1.0 x 0.60 mm) Low Body Height: 0.016″ (0.4 mm) Stand−off Voltage: 3.3 V, 5 V Low Leakage Response Time is < 1 ns IEC61000−4−2 Level 4 ESD Protection AEC−Q101 Qualified and PPAP Capable -
IPD50R380CEAUMA1 Power MOSFET, N Channel, 500 V, 14.1 A, 0.38 ohm, TO-252 (DPAK), Surface Mount SMD-24 FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 40 V Current - Continuous Drain (Id) @ 25°C : 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 7.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id : 2.2V @ 17µA Gate Charge (Qg) (Max) @ Vgs : 30 nC @ 10 V Vgs (Max) : 20V, -16V Input Capacitance (Ciss) (Max) @ Vds : 2340 pF @ 25 V -
LL4007 SOD-80 SMD Diode SMD-30 Voltage : 1000V Current : 1A Temperature : 65°C~175°C No. of Pins : 2 Size : SOD-80 -
LL4148 MMELF DIODE SOD-80 SMD-11 Diode Type: High-Speed Switching Diode Package: SOD-80 (MiniMELF) Reverse Voltage (VR): 100V Forward Current (IF): 300mA Forward Voltage (VF): 1V @ IF = 10mA Reverse Recovery Time (trr): 4ns Leakage Current (IR): 25nA @ VR = 75V Operating Temperature: -65°C to 175°C -
M7 Diode 1N4007 SMD SMA DO-214AC SMD-19 Forward Current: 1A Marking on device: M7 Peak Reverse Voltage: 1000V Non-Repetitive Peak Forward Surge Current: 30A Forward Voltage @ IF = 1.0A : 1V Package: DO-214AC -
MMUN2133LT1G PNP Transistor SMD-2 Transistor Polarity PNP Collector Emitter Voltage Max 50 V Continuous Collector Current 100 mA Power Dissipation 246 mW Maximum Operating Temperature - 55C 150 C Package / Case: SOT-23-3 -
MMUN2211LT1G PNP Transistor SMD-3 Transistor Polarity PNP Collector Emitter Voltage Max 50 V Continuous Collector Current 100 mA Power Dissipation 246 mW Maximum Operating Temperature - 55C 150 C Package / Case: SOT-23-3 -
MMUN2233LT1G NPN Transistor SMD-4 Transistor Polarity NPN Collector Emitter Voltage Max 50 V Continuous Collector Current 100 mA Power Dissipation 246 mW Maximum Operating Temperature - 55C 150 C Package / Case: SOT-23-3 -
PCT-223-2 Stationary Type Quick Connection Terminal RCT-732 Rated voltage: 400V Rated current: 32A Number of poles: 2 Wire section :0.08~4.0mm2 Number of clamps: 4 -
PHD-3055-N CHANNEL 60 V MOSFET SMD-6 N-Channel 60 V 10.3A (Tc) 33W (Tc) Surface Mount DPAK Drive Voltage (Max Rds On, Min Rds On) -- 10 V -
SI2302 N Channel Mosfet 2.2A SOT-23 SMD-29 Drain-Source Voltage: 20V Gate-Source Voltage: ±8V DC Continuous Drain Current: 2.2~2.8A Power Dissipation : 1.25W Type: N type Marking: A2SHB
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