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2SK596 - N CHANNEL MOSFET TO-92 DID-187 Drain-Source Breakdown Voltage 20 V Continuous Drain Current.10 mA Gate-Source Voltage - 20 V, 20 V Operating Temperature -55°C ~ 125°C Package/Case: TO-92 -
2SK792 - N CHANNEL MOSFET TO-220 DID-188 Drain-Source Breakdown Voltage 900 V Continuous Drain Current.3 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 100W Operating Temperature -55°C ~ 150°C Package/Case: TO-220 -
2SK956 - N CHANNEL MOSFET TO-247 DID-189 Drain-Source Breakdown Voltage 800 V Continuous Drain Current.9 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 150W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
2SK1507- N CHANNEL MOSFET TO-220 DID-190 Drain-Source Breakdown Voltage 600 V Continuous Drain Current.9 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 50W Operating Temperature -55°C ~ 150°C Package/Case: TO-220 -
2SK1341 - N CHANNEL MOSFET TO-247 DID-191 Drain-Source Breakdown Voltage 900 V Continuous Drain Current.6 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 100W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
2SK2221- N CHANNEL MOSFET TO-247 DID-192 Drain-Source Breakdown Voltage 200 V Continuous Drain Current.8 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 100W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
2SK3878 - N CHANNEL MOSFET TO-247 DID-193 Drain-Source Breakdown Voltage 900 V Continuous Drain Current.9 A Gate-Source Voltage - 30 V, 30 V Power Dissipation 150W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
HGTG5N120BND - N CHANNEL IGBT TO-247 DID-194 Voltage Collector Emitter Breakdown 1200 V Continuous Drain Current.21 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 167W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
HGTG11N120CND - N CHANNEL IGBT TO-247 DID-195 Voltage Collector Emitter Breakdown 1200 V Continuous Drain Current.43 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 298W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
FDA59N30 - N CHANNEL MOSFET TO-247 DID-196 Drain-Source Breakdown Voltage 300 V Continuous Drain Current.59 A Power Dissipation 500W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
FQA9N90C - N CHANNEL MOSFET TO-247 DID-197 Drain-Source Breakdown Voltage 900 V Continuous Drain Current.9 A Gate-Source Voltage - 30 V, 30 V Power Dissipation 280W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
FGL40N120ANDTU - N CHANNEL IGBT DID-198 Voltage Collector Emitter Breakdown 1200 V Continuous Drain Current.64 A Gate-Source Voltage - 25 V, 25 V Power Dissipation 500W Operating Temperature -55°C ~ 150°C Package/Case: TO-264
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25N120 N CHANNEL IGBT TO-247 DID-200 Voltage Collector Emitter Breakdown 1200 V Continuous Drain Current.46 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 313W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
IRG4PF50W - N CHANNEL IGBT TO-247 DID-202 Drain-Source Breakdown Voltage 900 V Continuous Drain Current.51 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 200W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
2SJ162 - P CHANNEL MOSFET TO-247 DID-203 Drain-Source Breakdown Voltage 160 V Continuous Drain Current.7 A Gate-Source Voltage - 15 V, 15 V Power Dissipation 100W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
1N4148 Ultrafast Recovery Diode DID-219 Maximum Repetitive Reverse Voltage VRRM: 75V (Max) Continuous forward current IF: 200 mA Non-repetitive Peak Forward Surge Current IFSM = 1 A at 1 ms pulse width; 4 A at 1 μs pulse width Continuous Reverse Voltage VF : 0.72 Maximum Breakdown Voltage VR : 75V (Max) Maximum Reverse-recovery time trr: 4 ns Maximum Power Dissipation PD: 500 mW
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YOUR PARTNER IN TECHNOLOGY SOLUTIONS
No.1030, Shriram Building,
Near Nagnath Par,
Sadashiv Peth, Pune – 411030,
Maharashtra, India
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Monday to Saturday
10:00 AM to 7.30 PM
(Store closed on all Sundays and Public Holidays)
NOTE
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