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2N2222 (Metal Can) NPN Switching Transistor TRD-122 Part No: 2N2222A Manufacturer: CDIL Package: TO-18 NPN, silicon transistor Metal Package Max Collector Continuous Current: 800 mAdc Max Collector-Emitter Voltage: 30 Vdc / Max Collector-Base Voltage: 60 Vdc Power Dissipation: 1.2W -
2N2222 NPN Bipolar Plastic Transistor TO-92 TRD-127 NPN Silicon Planer Switching Transistor Max Collector-Emitter Voltage: 40V Max Collector-Base Voltage: 75V Max Emitter-Base Voltage: 6V Continuous Collector Current: 800mA Operating temperature range: -65°C to 200°C To-92 Package -
2N3055 NPN Power Transistor TRD-126 Series: 2N3055 Product Type: BJTs – Bipolar Transistors Transistor Polarity: NPN Configuration: Single Collector-Emitter Voltage VCEO Max: 60V Collector- Base Voltage VCBO: 100V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 15 A Pd – Power Dissipation: 115 W Gain Bandwidth Product fT: 3 MHz Minimum Operating Temperature: -65°C Maximum Operating Temperature: +200°C Continuous Collector Current: 15 A DC Collector/Base Gain hFE Min: 20 DC Current Gain hFE Max: 70 Mounting Style: Through Hole Package/Case: TO-3 -
AC125 Germanium PNP-TO 1 Transistor TRD-40 Oper. Temp (°C) Max-100 hfe-100 Max. PD (W) -150 m Collector Capacitance (Cc) -50 PF -
AC128 Germanium PNP-TO 1 Transistor TRD-39 Collector to emitter voltage or VCE maximum is 32V Collector to emitter voltage or VCE maximum is 32V Its forward current transfer ratio or hFE minimum is 45 DC Current Gain or hFE ranges from 55 to 175 -
AC128 Germanium PNP-TO-1 Transistor TRD-43 Its collector current (IC) maximum is 1Amps Collector to emitter voltage or VCE maximum is 32V The maximum Transition Frequency or fT is 1 MHz DC Current Gain or hFE ranges from 55 to 175 -
BC 636 General Purpose PNP-TO 92 Transistor TRD-45 Collector-base Voltage: -45V Collector Current: -1A Total Power Dissipation: 1W Transition Frequency: 100MHz -
BC 639 High Current NPN TO 92 Transistor TRD-44 Max Collector Current(IC): 500mA Max Collector-Emitter Voltage (VCE): 80V Max Emitter-Base Voltage (VEBO): 5V Max Transition Frequency (fT): 200 MHz -
BC107 General Purpose NPN-TO 18 Transistor TRD-22 Current Gain (hFE): 450 (maximum) Continuous Collector current (IC) is 100mA Collector-Emitter voltage (VCEO) is 45V Collector-Base voltage (VCB0) is 50V -
BC108 General Purpose NPN-TO 18 Transistor TRD-32 Collector-Base Voltage (VCBO): 30V Collector-Emitter Voltage (VCEO): 25V Emitter-Base Voltage (VEBO): 5V Output Capacitance (Cobo): 4.5pF -
BC108C General Purpose NPN-TO 18 Transistor TRD-42 Collector emitter voltage (Vce) of 25V Continuous collector current (Ic) of 200mA Power dissipation of 600mW Collector emitter saturation voltage of 600mV at Ic=100mA -
BC109 General Purpose NPN-TO 18 Transistor TRD-7 Collector- Emitter Voltage VCEO Max: 20 V Collector- Base Voltage VCBO: 30 V Maximum DC Collector Current: 100 mA DC Collector/Base Gain hFE Min: 200 Power Dissipation: 300 mW -
BC177 Small Signal PNP-TO 18 Transistor TRD-10 Collector-Base Voltage (VCBO): 50V Collector-Emitter Voltage (VCEO): 45V Emitter-Base Voltage (VEBO): 5V Output Capacitance (Cobo): 4pF Transition Frequency (fT): 200MHz -
BC178 Small Signal PNP-TO 18 Transistor TRD-14 Collector-emitter voltage-45 V Collector current-0.2 A Power dissipation-0.3/0.75W Frequency-200 MHZ Noise Figure-10 Db -
BC179 General Purpose PNP-TO 92 Transistor TRD-35 Collector-emitter voltage -20V Collector current-0.2A Power dissipation - 0.3/0.75W -
BC182L General Purpose Amplifier NPN-TO 92 Transistor TRD-15 Collector-Emitter Volt (Vceo): 50V. Collector Current (Ic): 0.1A Output Capacitance (Cobo)-5PF Transition Frequency (fT)-150 MHZ Power Dissipation (PD)-1 W
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