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2N2219 NPN Switching Transistor 60V 0.8A TO-39 TRD-129 Collector Base Voltage : 75V Collector Emitter Voltage : 50V Emitter Base Voltage : 6V Collector Current : 800mA Temperature : 65°C~200°C Mounting Type : Through Hole Number of Pins : 3 Package : TO-39 -
2N2222 (Metal Can) NPN Switching Transistor TRD-122 Part No: 2N2222A Manufacturer: CDIL Package: TO-18 NPN, silicon transistor Metal Package Max Collector Continuous Current: 800 mAdc Max Collector-Emitter Voltage: 30 Vdc / Max Collector-Base Voltage: 60 Vdc Power Dissipation: 1.2W -
2N2222 NPN Bipolar Plastic Transistor TO-92 TRD-127 NPN Silicon Planer Switching Transistor Max Collector-Emitter Voltage: 40V Max Collector-Base Voltage: 75V Max Emitter-Base Voltage: 6V Continuous Collector Current: 800mA Operating temperature range: -65°C to 200°C To-92 Package -
2N2646 Unijunction Transistor TO-18 TRD-133 Emitter Reverse Voltage: 30V Interbase Voltage: 35V / RMS Emitter Current: 50mA Peak Emitter Current (Duty Cycle ≤1%, PRR≤10pps): 2.0A RMS Power Dissipation: 300mV Operating and Storage Junction Temperature: -65 to 150 °C Pkg-TO18 -
2N2907A PNP Switching Metal Transistor TO-18 TRD-131 Type: PNP Collector-Emitter Voltage, max: -40 V Collector-Base Voltage, max: -60 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -0.6 A Collector Dissipation: 0.4 W DC Current Gain (hfe): 100 to 300 Transition Frequency, min: 200 MHz Operating and Storage Junction Temperature Range: -65 to 200 °C Package: TO-18 -
2N3055 NPN Power Transistor TRD-126 Series: 2N3055 Product Type: BJTs – Bipolar Transistors Transistor Polarity: NPN Configuration: Single Collector-Emitter Voltage VCEO Max: 60V Collector- Base Voltage VCBO: 100V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 15 A Pd – Power Dissipation: 115 W Gain Bandwidth Product fT: 3 MHz Minimum Operating Temperature: -65°C Maximum Operating Temperature: +200°C Continuous Collector Current: 15 A DC Collector/Base Gain hFE Min: 20 DC Current Gain hFE Max: 70 Mounting Style: Through Hole Package/Case: TO-3 -
2N4401 NPN General Purpose Transistor TO-92 TRD-128 Product Type: BJTs – Bipolar Transistor Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 40 V Collector- Base Voltage VCBO: 60 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 750 mV Maximum DC Collector Current: 600 mA Pd – Power Dissipation: 625 mW Gain Bandwidth Product fT: 250 MHz Continuous Collector Current: 0.6 A DC Collector Base Gain hFE Min: 20 Operating Temperature Range: – 55°C ~ +150°C Mounting Style: Through Hole Package/Case: TO-92-3 -
AC125 Germanium PNP-TO 1 Transistor TRD-40 Oper. Temp (°C) Max-100 hfe-100 Max. PD (W) -150 m Collector Capacitance (Cc) -50 PF -
AC128 Germanium PNP-TO 1 Transistor TRD-39 Collector to emitter voltage or VCE maximum is 32V Collector to emitter voltage or VCE maximum is 32V Its forward current transfer ratio or hFE minimum is 45 DC Current Gain or hFE ranges from 55 to 175 -
AC128 Germanium PNP-TO-1 Transistor TRD-43 Its collector current (IC) maximum is 1Amps Collector to emitter voltage or VCE maximum is 32V The maximum Transition Frequency or fT is 1 MHz DC Current Gain or hFE ranges from 55 to 175
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