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2N3055 NPN Power Transistor TRD-126 Series: 2N3055 Product Type: BJTs – Bipolar Transistors Transistor Polarity: NPN Configuration: Single Collector-Emitter Voltage VCEO Max: 60V Collector- Base Voltage VCBO: 100V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 15 A Pd – Power Dissipation: 115 W Gain Bandwidth Product fT: 3 MHz Minimum Operating Temperature: -65°C Maximum Operating Temperature: +200°C Continuous Collector Current: 15 A DC Collector/Base Gain hFE Min: 20 DC Current Gain hFE Max: 70 Mounting Style: Through Hole Package/Case: TO-3 -
2N4401 NPN General Purpose Transistor TO-92 TRD-128 Product Type: BJTs – Bipolar Transistor Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 40 V Collector- Base Voltage VCBO: 60 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 750 mV Maximum DC Collector Current: 600 mA Pd – Power Dissipation: 625 mW Gain Bandwidth Product fT: 250 MHz Continuous Collector Current: 0.6 A DC Collector Base Gain hFE Min: 20 Operating Temperature Range: – 55°C ~ +150°C Mounting Style: Through Hole Package/Case: TO-92-3 -
2N7000 N-Channel MOSFET DID-218 Transistor Type: N-Channel MOSFET Drain-Source Voltage (Vds): 60V Continuous Drain Current (Id): 200mA Package Type: TO-92 (Through-Hole) Gate-Source Voltage (Vgs): ±20V On-Resistance (Rds(on)): ≤ 5Ω @ Vgs = 10V Total Gate Charge (Qg): 2nC (Typical) Threshold Voltage (Vgs(th)): 0.8V to 3V Switching Speed: Fast, suitable for high-speed applications

