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2SJ162 - P CHANNEL MOSFET TO-247 DID-203 Drain-Source Breakdown Voltage 160 V Continuous Drain Current.7 A Gate-Source Voltage - 15 V, 15 V Power Dissipation 100W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
IRG4PF50W - N CHANNEL IGBT TO-247 DID-202 Drain-Source Breakdown Voltage 900 V Continuous Drain Current.51 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 200W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
IRG4PH40UD2-E - N CHANNEL IGBT TO-247 DID-201 Voltage Collector Emitter Breakdown 1200 V Continuous Drain Current.10 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 160W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
25N120 N CHANNEL IGBT TO-247 DID-200 Voltage Collector Emitter Breakdown 1200 V Continuous Drain Current.46 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 313W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
W12NK95Z - N CHANNEL MOSFET TO-247 DID-199 Drain-Source Breakdown Voltage 950 V Continuous Drain Current.10 A Gate-Source Voltage - 30 V, 30 V Power Dissipation 230W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
FGL40N120ANDTU - N CHANNEL IGBT DID-198 Voltage Collector Emitter Breakdown 1200 V Continuous Drain Current.64 A Gate-Source Voltage - 25 V, 25 V Power Dissipation 500W Operating Temperature -55°C ~ 150°C Package/Case: TO-264
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FQA9N90C - N CHANNEL MOSFET TO-247 DID-197 Drain-Source Breakdown Voltage 900 V Continuous Drain Current.9 A Gate-Source Voltage - 30 V, 30 V Power Dissipation 280W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
FDA59N30 - N CHANNEL MOSFET TO-247 DID-196 Drain-Source Breakdown Voltage 300 V Continuous Drain Current.59 A Power Dissipation 500W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
HGTG11N120CND - N CHANNEL IGBT TO-247 DID-195 Voltage Collector Emitter Breakdown 1200 V Continuous Drain Current.43 A Gate-Source Voltage - 20 V, 20 V Power Dissipation 298W Operating Temperature -55°C ~ 150°C Package/Case: TO-247 -
IPD50R380CEAUMA1 Power MOSFET, N Channel, 500 V, 14.1 A, 0.38 ohm, TO-252 (DPAK), Surface Mount SMD-24 FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 40 V Current - Continuous Drain (Id) @ 25°C : 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 7.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id : 2.2V @ 17µA Gate Charge (Qg) (Max) @ Vgs : 30 nC @ 10 V Vgs (Max) : 20V, -16V Input Capacitance (Ciss) (Max) @ Vds : 2340 pF @ 25 V
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No.1030, Shriram Building,
Near Nagnath Par,
Sadashiv Peth, Pune – 411030,
Maharashtra, India
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