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2N7000 N-Channel MOSFET DID-218 Transistor Type: N-Channel MOSFET Drain-Source Voltage (Vds): 60V Continuous Drain Current (Id): 200mA Package Type: TO-92 (Through-Hole) Gate-Source Voltage (Vgs): ±20V On-Resistance (Rds(on)): ≤ 5Ω @ Vgs = 10V Total Gate Charge (Qg): 2nC (Typical) Threshold Voltage (Vgs(th)): 0.8V to 3V Switching Speed: Fast, suitable for high-speed applications -
2N4401 NPN General Purpose Transistor TO-92 TRD-128 Product Type: BJTs – Bipolar Transistor Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 40 V Collector- Base Voltage VCBO: 60 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 750 mV Maximum DC Collector Current: 600 mA Pd – Power Dissipation: 625 mW Gain Bandwidth Product fT: 250 MHz Continuous Collector Current: 0.6 A DC Collector Base Gain hFE Min: 20 Operating Temperature Range: – 55°C ~ +150°C Mounting Style: Through Hole Package/Case: TO-92-3 -
2N3055 NPN Power Transistor TRD-126 Series: 2N3055 Product Type: BJTs – Bipolar Transistors Transistor Polarity: NPN Configuration: Single Collector-Emitter Voltage VCEO Max: 60V Collector- Base Voltage VCBO: 100V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 15 A Pd – Power Dissipation: 115 W Gain Bandwidth Product fT: 3 MHz Minimum Operating Temperature: -65°C Maximum Operating Temperature: +200°C Continuous Collector Current: 15 A DC Collector/Base Gain hFE Min: 20 DC Current Gain hFE Max: 70 Mounting Style: Through Hole Package/Case: TO-3 -
2N2907A PNP Switching Metal Transistor TO-18 TRD-131 Type: PNP Collector-Emitter Voltage, max: -40 V Collector-Base Voltage, max: -60 V Emitter-Base Voltage, max: -5 V Collector Current − Continuous, max: -0.6 A Collector Dissipation: 0.4 W DC Current Gain (hfe): 100 to 300 Transition Frequency, min: 200 MHz Operating and Storage Junction Temperature Range: -65 to 200 °C Package: TO-18 -
2N2646 Unijunction Transistor TO-18 TRD-133 Emitter Reverse Voltage: 30V Interbase Voltage: 35V / RMS Emitter Current: 50mA Peak Emitter Current (Duty Cycle ≤1%, PRR≤10pps): 2.0A RMS Power Dissipation: 300mV Operating and Storage Junction Temperature: -65 to 150 °C Pkg-TO18 -
2N2222 NPN Bipolar Plastic Transistor TO-92 TRD-127 NPN Silicon Planer Switching Transistor Max Collector-Emitter Voltage: 40V Max Collector-Base Voltage: 75V Max Emitter-Base Voltage: 6V Continuous Collector Current: 800mA Operating temperature range: -65°C to 200°C To-92 Package -
2N2222 (Metal Can) NPN Switching Transistor TRD-122 Part No: 2N2222A Manufacturer: CDIL Package: TO-18 NPN, silicon transistor Metal Package Max Collector Continuous Current: 800 mAdc Max Collector-Emitter Voltage: 30 Vdc / Max Collector-Base Voltage: 60 Vdc Power Dissipation: 1.2W -
2N2219 NPN Switching Transistor 60V 0.8A TO-39 TRD-129 Collector Base Voltage : 75V Collector Emitter Voltage : 50V Emitter Base Voltage : 6V Collector Current : 800mA Temperature : 65°C~200°C Mounting Type : Through Hole Number of Pins : 3 Package : TO-39 -
2mm x 43mm 304 Stainless Steel Round Rod RB-54 Made of 304 stainless steel Diameter: 2mm; Length: 43mm
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