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BUV48A NPN Silicon Power Transistor TRD-115 Polarity: NPN Maximum Collector Power Dissipation (Pc): 150 W Package: TO-247 Maximum Collector-Base Voltage |Vcb|: 850 V Maximum Collector-Emitter Voltage |Vce|: 400 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 15 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 5 MHz Collector Capacitance (Cc): 250 pF Forward Current Transfer Ratio (hFE), MIN: 5
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CJMCU-3221 INA3221 Triple-way Low/High Side I2C Output Current/Power Monitor Module E-985 Senses Bus Voltages From 0 V to 26 V Reports Shunt and Bus Voltage Offset Voltage: ±80 µV (max) Gain Error: 0.25% (max) Configurable Averaging Options Four Programmable Addresses Programmable Alert and Warning Outputs Power-Supply Operation: 2.7 V to 5.5 V
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A wireless radio frequency (RF) transmitter and receiver can be easily made using HT12D Decoder, HT12E Encoder and ASK RF Module. Wireless transmission can be done by using 433Mhz or 315MHz ASK RF Transmitter and Receiver modules. In these modules digital data is represented by different amplitudes of the carrier wave, hence this modulation is known as Amplitude Shift Keying (ASK). Radio Frequency (RF) transmission is more strong and reliable than Infrared (IR) transmission due to following reasons : Radio Frequency signals can travel longer distances than Infrared. Only line of sight communication is possible through Infrared while radio frequency signals can be transmitted even when there is obstacles. Infrared signals will get interfeared by other IR sources but signals on one frequency band in RF will not interfeared by other frequency RF signals.