25N120 N Channel IGBT TO-247 Power Transistor (1200V High Power IGBT)

The 25N120 N channel IGBT is designed for high voltage and high power switching applications in industrial electronics, inverter systems, and motor control circuits. It provides efficient switching performance with high current handling capability and low conduction losses.

Key Features -

• N channel insulated gate bipolar transistor

• High voltage switching capability

• Low conduction and switching losses

• TO-247 high power package

• High current handling performance

• Suitable for industrial power applications

Specifications -

• Product type - N channel IGBT power transistor

• Model - 25N120

• Package type - TO-247

• Mounting type - Through Hole

• Voltage rating - 1200V

• Current rating - 25A

• Frequency - Suitable for high speed switching applications

• Material - Silicon semiconductor

• Additional features - High efficiency power switching design

Applications -

• Inverter and UPS systems

• Industrial motor drives

• SMPS power supplies

• Induction heating circuits

• High voltage switching systems