BD115 Silicon Planar High Voltage NPN Transistor (TO-39 Metal Package)

The BD115 is identified as a silicon planar high-voltage NPN transistor in a TO-39 metal package. It is intended for electronic circuits that require an NPN transistor for signal processing, switching, or high-voltage applications, subject to the device's actual electrical ratings. Its metal package supports through-hole mounting and mechanical integration into compatible circuit assemblies. Confirm the exact voltage, current, power dissipation, and pin configuration from the manufacturer's datasheet before selecting it for a circuit.

Key Features -

• Silicon planar NPN transistor

• Designed for high-voltage circuit applications

• TO-39 metal through-hole package

• Three-terminal transistor configuration

• Suitable for compatible signal and switching circuits

• Metal package for PCB mounting and electronic assembly

Specifications -

• Product Type: Bipolar Junction Transistor (BJT)

• Part Number: BD115

• Transistor Polarity: NPN

• Semiconductor Technology: Silicon Planar

• Package Type: TO-39 Metal Can

• Mounting Type: Through Hole

• Number of Pins: 3

• Collector-Emitter Voltage: Verify the manufacturer's datasheet

• Collector-Base Voltage: Verify the manufacturer's datasheet

• Maximum Collector Current: Verify the manufacturer's datasheet

• DC Current Gain (hFE): Verify the manufacturer's datasheet

• Power Dissipation: Verify the manufacturer's datasheet and thermal conditions

• Pin Configuration: Confirm the terminal arrangement using the manufacturer's datasheet

Applications -

• High-voltage electronic circuits

• Signal amplification stages, subject to device ratings

• Transistor switching circuits

• Electronic control equipment

• Industrial electronics

• Electronic equipment repair and prototyping.