BD912 Silicon Power PNP Transistor (TO-220AB, 100V, 15A)

The BD912 is a silicon power PNP bipolar junction transistor designed for power amplification, switching, and driver applications. Its TO-220AB through-hole package supports PCB mounting and heatsink installation, making it suitable for audio amplifier output stages, power control circuits, and electronic equipment. With a specified collector-emitter voltage rating of 100V, collector current rating of 15A, and power dissipation rating of 90W, it is intended for applications operating within its electrical and thermal limits.

Key Features -

• Silicon power PNP bipolar junction transistor

• Maximum collector-emitter voltage of 100V, as specified

• Maximum collector current of 15A, as specified

• Power dissipation rating of 90W, as specified

• TO-220AB through-hole package

• Suitable for power amplification and switching

• Supports heatsink mounting for thermal management

• Designed for power driver and output stages

Specifications -

• Product Type: Bipolar Junction Transistor (BJT)

• Part Number: BD912

• Transistor Polarity: PNP

• Semiconductor Material: Silicon

• Transistor Configuration: Single

• Package Type: TO-220AB

• Mounting Type: Through Hole

• Collector-Emitter Voltage (VCEO): 100V, as provided

• Maximum Collector Current (IC): 15A, as provided

• Power Dissipation (Pd): 90W, as provided; actual allowable dissipation depends on thermal conditions

• DC Current Gain (hFE): Verify according to the manufacturer's datasheet

• Number of Pins: 3

• Pin Configuration: Verify according to the manufacturer's datasheet

Applications -

• Audio power amplifier output stages

• Power switching circuits

• Complementary power amplifier circuits

• Driver stages for power devices

• Power supply control circuits

• Industrial electronic equipment

• Electronic repair and prototyping projects