BPV11F Phototransistor 950nm 150mW 70V (IR Phototransistor Sensor)
The BPV11F Phototransistor is a silicon NPN infrared sensor designed to detect IR radiation and convert it into an electrical signal. It is optimized for wavelengths between 900nm to 950nm, making it ideal for use with standard IR emitters in sensing and communication systems.
This device features a daylight blocking filter, improving performance in ambient light conditions, and is housed in a 5mm T1¾ package for easy PCB mounting. It provides high radiant sensitivity and fast response, making it suitable for precision detection applications.
Key Features
- Infrared Detection 900nm to 950nm optimized for IR emitters
- NPN Phototransistor high gain light sensing
- Daylight Blocking Filter improved ambient light immunity
- High Radiant Sensitivity for accurate detection
- Fast Response suitable for switching applications
- 5mm Package easy PCB mounting
Specifications
- Device Type: Silicon NPN phototransistor
- Peak Sensitivity: approx 930nm
- Spectral Range: 900nm to 980nm
- Collector Emitter Voltage: 70V
- Power Dissipation: 150mW
- Collector Current: up to 50mA max
- Viewing Angle: approx 30 degree typical
- Angle of Half Sensitivity: ±15 degree
- Package Type: 5mm T1¾ through hole
- Operating Temperature: -40 to 100 degree C
Applications
- IR detection and sensing systems
- Proximity and object detection
- Optical encoders and interrupters
- Industrial measurement and control
- Embedded and automation systems
Pinout Configuration
- Collector
- Emitter
- Base optional for sensitivity control
Working Principle
- Infrared light falls on junction
- Photons generate base current
- Transistor amplifies current
- Output varies with IR intensity
