BPV11F Phototransistor 950nm 150mW 70V (IR Phototransistor Sensor)

The BPV11F Phototransistor is a silicon NPN infrared phototransistor designed for detecting infrared radiation in the 900nm to 950nm wavelength range. Featuring a built-in daylight blocking filter, it offers excellent immunity to ambient visible light while providing high sensitivity to infrared emitters. Housed in a standard 5mm T1¾ through-hole package, the BPV11F is ideal for IR sensing, optical switching, object detection, optical encoders, industrial automation, and embedded electronics applications.

Key Features -

• Silicon NPN infrared phototransistor

• Optimized for 900nm to 950nm infrared wavelengths

• Peak sensitivity around 930nm

• Integrated daylight blocking filter

• High radiant sensitivity

• Fast switching response

• 5mm T1¾ through-hole package

• Low noise and reliable operation

• Easy PCB integration

• Suitable for industrial and embedded applications

Specifications -

• Product type - Infrared Phototransistor

• Model - BPV11F

• Device type - Silicon NPN Phototransistor

• Peak sensitivity - Approximately 930nm

• Spectral range - 900nm to 980nm

• Collector-emitter voltage (VCEO) - 70V Maximum

• Maximum collector current (IC) - 50mA

• Power dissipation - 150mW

• Viewing angle - Approximately 30 Degree

• Half sensitivity angle - ±15 Degree

• Package type - 5mm T1¾ Through Hole

• Operating temperature - Minus 40C to 100C

Applications -

• Infrared detection systems

• Proximity sensing

• Object detection

• Optical encoders

• Optical interrupters

• Industrial automation

• Embedded systems

• IR communication circuits