EL1ML2 Infrared Emitting Diode 940nm TO18 (EL1ML2 IR LED)
The EL1ML2 Infrared Emitting Diode is a high power GaAs based IR LED designed to emit infrared radiation at a peak wavelength of 940nm. It is widely used in optical sensing, encoder systems, and IR communication applications.
This device is built in a TO18 metal can package with a clear epoxy lens, providing durability, stable optical alignment, and a relatively wide beam angle for effective IR transmission.
Key Features
- Infrared Emission 940nm optimized for IR sensing systems
- High Power Output suitable for long range detection
- Wide Beam Angle approx ±32 degree for broader coverage
- TO18 Metal Can Package robust and reliable
- Fast Switching suitable for high speed applications
- Suitable for optical switches and encoders
Specifications
- Device Type: Infrared emitting diode
- Peak Wavelength: 940nm
- Forward Voltage: approx 1.2V to 1.5V
- Forward Current: up to 50mA typical operation
- Pulse Forward Current: up to 100mA
- Radiant Output: high power IR emission
- Viewing Angle: approx ±32 degree
- Reverse Voltage: approx 5V
- Operating Temperature: -25 to 100 degree C
- Package Type: TO18 metal can
Applications
- Optical switches and photo interrupters
- IR communication systems
- Encoder and position sensing
- Proximity and object detection
- Industrial automation and robotics
Pinout Configuration
Working Principle
- Current flows through GaAs junction
- Semiconductor emits infrared light
- IR beam used for sensing or transmission
- Receiver detects signal for control or measurement
