HGTG11N120CND N Channel IGBT TO-247 Power Transistor (1200V High Power IGBT)

The HGTG11N120CND N channel IGBT is designed for high voltage switching and power control applications in inverter systems, motor drives, SMPS, and industrial electronic equipment. It provides efficient high speed switching with low conduction losses and reliable high power operation.

Key Features -

• N channel insulated gate bipolar transistor

• High voltage switching capability

• TO-247 high power package

• Fast switching performance

• Low saturation voltage operation

• Suitable for industrial power applications

Specifications -

• Product type - N channel IGBT power transistor

• Model - HGTG11N120CND

• Package type - TO-247

• Mounting type - Through Hole

• Voltage rating - 1200V

• Current rating - 22A

• Frequency - Suitable for high frequency switching applications

• Material - Silicon semiconductor

• Additional features - Efficient high power switching with rugged construction

Applications -

• Industrial inverter systems

• Motor drive circuits

• SMPS power supplies

• UPS and power management systems

• Induction heating equipment