HGTG5N120BND N Channel IGBT (1200V, TO 247)

The HGTG5N120BND is an N channel IGBT power transistor designed for high voltage and high speed power switching applications. Its combination of MOS controlled gate operation and bipolar conduction makes it suitable for inverter systems, SMPS circuits, motor drives and industrial power electronics. The TO 247 through hole package provides effective thermal handling for demanding power switching designs.

Key Features -

• N channel IGBT power transistor

• 1200V collector emitter voltage

• High voltage switching capability

• Fast switching performance

• Low conduction loss characteristics

• TO 247 power package

• Through hole mounting

• Suitable for high power switching circuits

• Suitable for inverter and motor control applications

• Rugged power semiconductor construction

Specifications -

• Part Number: HGTG5N120BND

• Product Type: IGBT Power Transistor

• Transistor Type: N Channel IGBT

• Collector Emitter Voltage: 1200V

• Package: TO 247

• Mounting Type: Through Hole

• Gate Emitter Voltage: Up to positive 20V / negative 20V

• Switching Type: High Speed Power Switching

• Application: High Voltage Power Control

Applications -

• Industrial inverter systems

• SMPS power supplies

• Motor drive circuits

• Induction heating systems

• High voltage switching circuits

• Power conversion equipment

• Industrial power electronics

• UPS systems

• Switching power circuits

• Motor control equipment