IRFD9120 P Channel MOSFET DIP4 Power Transistor (IRFD9120 MOSFET)

The IRFD9120 P Channel MOSFET is designed for power switching and control applications in embedded systems, power supplies, motor control circuits, and industrial electronics. It provides reliable switching performance and efficient power handling in a compact DIP4 package.

Key Features -

• P channel power MOSFET

• DIP4 through hole package

• High speed switching performance

• Low ON resistance characteristics

• Compact package design

• Suitable for power control applications

Specifications -

• Product type - Power MOSFET

• Model - IRFD9120

• MOSFET type - P channel enhancement mode

• Package type - DIP4 package

• Mounting type - Through hole mounting

• Drain source voltage - Approx 100V

• Continuous drain current - Approx 2A

• Gate threshold voltage - Approx minus 2V to minus 4V

• Operating temperature - Approx minus 55 degree C to plus 150 degree C

• Additional features - Fast switching, compact size, reliable thermal performance

Applications -

• Power switching circuits

• DC DC converters

• Motor control applications

• Embedded electronic systems

• Industrial electronics