L14G2 Phototransistor 940nm TO18 (L14G2 IR Phototransistor)
The L14G2 Phototransistor is a silicon infrared light sensor designed to detect IR radiation and convert it into an electrical signal. It operates at a peak wavelength of around 940nm, making it ideal for use with IR emitters in sensing and communication applications. It is housed in a hermetically sealed TO18 metal can package, providing durability and stable optical performance.
This device is an NPN phototransistor that amplifies the photocurrent generated by incident light, offering higher sensitivity compared to photodiodes. It is commonly used in optical sensing systems, robotics, and proximity detection applications.
Key Features
- Infrared Detection 940nm optimized for IR emitters
- NPN Phototransistor high gain light detection
- Narrow Viewing Angle approx 10 degree for focused sensing
- TO18 Metal Can Package robust and stable
- Fast Response suitable for switching applications
- Hermetically Sealed design for reliability
Specifications
- Device Type: Silicon phototransistor
- Peak Wavelength: approx 940nm
- Transistor Type: NPN
- Collector Emitter Voltage: up to 45V
- Collector Current: approx 0.5mA typical
- Viewing Angle: approx ±10 degree
- Power Dissipation: approx 300mW
- Response Time: microsecond range switching
- Package Type: TO18 metal can
- Mounting Type: Through hole
Applications
- IR sensing and detection systems
- Proximity and object detection
- Optical encoders and interrupters
- Robotics and automation
- Light and dark sensing circuits
Pinout Configuration
- Emitter pin
- Base pin optional or internally connected
- Collector pin
Working Principle
- Infrared light falls on junction
- Photons generate base current
- Transistor amplifies current
- Output varies with light intensity
