L14G2 Infrared Phototransistor 940nm TO 18 (IR Light Sensor)

The L14G2 Infrared Phototransistor is a silicon light sensitive semiconductor designed to detect infrared radiation and convert it into an electrical signal. Its photosensitive transistor structure provides current gain, making it suitable for optical detection circuits that require sensitivity to changes in infrared light. The TO 18 metal can package supports through hole mounting in electronic equipment and sensing assemblies.

Key Features -

• Silicon infrared phototransistor

• Sensitive to infrared light around 940nm, subject to the exact device datasheet

• NPN phototransistor configuration, as specified

• Metal can TO 18 package

• Suitable for optical switching and light detection circuits

• Compatible with suitable infrared emitters and optical systems

Specifications -

• Device Type: Silicon phototransistor

• Model: L14G2

• Peak Wavelength: Approximately 940nm, verify against the manufacturer datasheet

• Transistor Type: NPN, as specified

• Collector Emitter Voltage: Up to 45V, as supplied in the product specifications

• Collector Current: Refer to the exact manufacturer datasheet

• Viewing Angle: Approximately plus or minus 10 Degree, if specified for the supplied version

• Power Dissipation: Verify against the manufacturer datasheet

• Response Time: Depends on operating conditions and the specific device

• Package Type: TO 18 metal can

• Mounting Type: Through hole

Applications -

• Infrared sensing and detection systems

• Proximity and object detection

• Optical encoders and interrupters

• Robotics and automation equipment

• Light detection circuits

• Infrared emitter and receiver assemblies

• Embedded electronics projects