L14G3 Phototransistor 940nm TO18 (L14G3 IR Phototransistor)
The L14G3 Phototransistor is a silicon infrared light sensor designed to detect IR radiation and convert it into an electrical signal. It operates at a peak wavelength around 940nm, making it ideal for use with IR emitters in sensing and communication systems.
It is housed in a hermetically sealed TO18 metal can package and features a narrow reception angle, allowing precise and directional light detection.
Key Features
- Infrared Detection 940nm optimized for IR systems
- NPN Phototransistor high gain light sensing
- Narrow Viewing Angle approx 10 to 20 degree
- TO18 Metal Can Package durable and stable
- Fast Switching suitable for high speed circuits
- Hermetically Sealed for reliability
Specifications
- Device Type: Silicon phototransistor
- Peak Wavelength: approx 940nm
- Collector Emitter Voltage: up to 45V
- Collector Current: up to approx 2mA
- Viewing Angle: approx ±10 degree
- Power Dissipation: up to 300mW
- Response Time: rise approx 8 microseconds fall approx 7 microseconds
- Package Type: TO18 metal can
- Mounting Type: Through hole
Applications
- IR sensing and detection systems
- Proximity and object detection
- Optical encoders and interrupters
- Robotics and automation
- Light and dark sensing circuits
Pinout Configuration
- Emitter pin connected to case
- Base pin optional
- Collector pin
Working Principle
- Infrared light falls on junction
- Photons generate base current
- Transistor amplifies current
- Output varies with light intensity
