940nm Infrared Phototransistor TO 18 (IR Light Sensor)

The 940nm Infrared Phototransistor is a silicon photosensitive semiconductor designed to detect infrared radiation and convert it into an electrical signal. It is suitable for optical sensing systems that use infrared emitters to detect objects, monitor light levels or identify interruptions in an optical path. The TO 18 metal can package supports through hole mounting in electronic circuits and optical sensing assemblies.

Key Features -

• Designed for infrared light detection around 940nm

• NPN phototransistor configuration, subject to the exact model

• TO 18 metal can package

• Directional optical detection, depending on the device characteristics

• Suitable for optical switching and light sensing circuits

• Compatible with suitable infrared emitters

Specifications -

• Device Type: Silicon phototransistor

• Peak Wavelength: Approximately 940nm, subject to the exact device datasheet

• Transistor Type: NPN, if specified for the supplied model

• Collector Emitter Voltage: Up to 45V, as specified

• Collector Current: Refer to the manufacturer datasheet

• Viewing Angle: Approximately plus or minus 10 Degree, if specified for the supplied model

• Power Dissipation: Approximately 300mW, subject to datasheet confirmation

• Response Time: Depends on device characteristics and operating conditions

• Package Type: TO 18 metal can

• Mounting Type: Through hole

Applications -

• Infrared sensing and detection systems

• Proximity and object detection

• Optical encoders and interrupters

• Robotics and automation equipment

• Light detection circuits

• Infrared transmitter and receiver assemblies

• Embedded electronics projects