Phototransistor 940nm TO18 (IR Phototransistor Sensor)
The Phototransistor 940nm TO18 is a silicon light sensor designed to detect infrared radiation and convert it into an electrical signal. It operates at a peak wavelength around 940nm, making it ideal for use with IR emitters in sensing and communication applications.
It is a narrow angle phototransistor housed in a TO18 metal can package, providing stable optical alignment and reliable performance. These types of phototransistors are commonly used where directional and accurate IR detection is required.
Key Features
- Infrared Detection 940nm optimized for IR systems
- NPN Phototransistor high gain light sensing
- Narrow Viewing Angle approx ±10 degree
- TO18 Metal Can Package durable and stable
- Fast Response suitable for switching applications
- Hermetically Sealed construction
Specifications
- Device Type: Silicon phototransistor
- Peak Wavelength: approx 940nm
- Collector Emitter Voltage: up to 45V
- Collector Current: up to milliamp range
- Viewing Angle: approx ±10 degree
- Power Dissipation: approx 300mW
- Response Time: microsecond range switching
- Package Type: TO18 metal can
- Mounting Type: Through hole
Applications
- IR sensing and detection systems
- Proximity and object detection
- Optical encoders and interrupters
- Robotics and automation
- Light detection circuits
Pinout Configuration
- Emitter connected to case
- Base optional
- Collector output
Working Principle
- Infrared light falls on junction
- Photons generate base current
- Transistor amplifies current
- Output varies with light intensity
