MDP08N055TH N-Channel Power MOSFET (80V 120A TO-220 Power Transistor)

The MDP08N055TH is a high-performance N-Channel trench power MOSFET from Magnachip, designed for high-efficiency switching and power management applications. It features an 80V drain-to-source voltage, 120A continuous drain current, and ultra-low ON resistance of less than 5.5mΩ, making it ideal for DC-DC converters, battery management systems, motor controllers, e-bikes, electric vehicles, SMPS, and industrial power electronics.

Packaged in a TO-220 through-hole package, the MDP08N055TH provides excellent thermal performance and fast switching characteristics, ensuring reliable operation in demanding power applications.

Key Features -

• N-Channel trench power MOSFET

• 80V drain-to-source voltage (VDS)

• 120A continuous drain current

• Ultra-low RDS(on) below 5.5mΩ @ VGS = 10V

• Fast switching performance

• High efficiency and low conduction losses

• TO-220 through-hole package

• Operating junction temperature up to 175C

• Suitable for high-current power applications

Specifications -

• Product Type: Power MOSFET

• Model: MDP08N055TH

• Brand: Magnachip

• Channel Type: N-Channel

• Drain-to-Source Voltage (VDS): 80V

• Continuous Drain Current (ID): 120A

• Gate-to-Source Voltage (VGS): ±20V

• ON Resistance (RDS(on)): Less than 5.5mΩ @ VGS = 10V

• Package: TO-220

• Mounting Type: Through Hole

• Maximum Junction Temperature: 175C

Applications -

• Switching Mode Power Supplies (SMPS)

• DC-DC converters

• Battery management systems (BMS)

• E-bike and light electric vehicle controllers

• Motor drive circuits

• Solar power systems

• Industrial power supplies

• High-current switching circuits

• DIY power electronics