MJE340 NPN Bipolar Power Transistor 300V 500mA TO-126 (High Voltage NPN Transistor)

The MJE340 is a high-voltage NPN Bipolar Junction Transistor (BJT) designed for switching, amplification, and driver applications. With a 300V collector-emitter voltage rating, 500mA collector current capability, and 20W power dissipation, it provides reliable performance in high-voltage electronic circuits. The compact TO-126 package offers good thermal performance, making it suitable for audio amplifiers, power control circuits, voltage regulators, and industrial electronics.

Key Features -

• High voltage NPN Bipolar Junction Transistor

• Collector-emitter voltage rating of 300V DC

• Collector current capability of 500mA

• Total power dissipation of 20W

• DC current gain range 30 to 240

• Wide operating junction temperature range

• Compact TO-126 through-hole package

• Suitable for switching and amplification applications

Specifications -

• Product Type - NPN Bipolar Power Transistor

• Part Number - MJE340

• Transistor Type - NPN

• Collector-Emitter Voltage (VCEO) - 300V DC

• Emitter-Base Voltage (VEBO) - 3V DC

• Collector Current (IC) - 500mA DC

• Total Power Dissipation (PD) - 20W (at TC = 25°C)

• DC Current Gain (hFE) - 30 to 240 (VCE = 10V, IC = 100mA)

• Package Type - TO-126

• Mounting Type - Through Hole

• Operating Junction Temperature - -55°C to +150°C

Applications -

• Audio amplifier driver stages

• High voltage switching circuits

• Power supply circuits

• Voltage regulator circuits

• Motor control circuits

• Relay driver circuits

• Industrial control equipment

• Electronic inverter circuits

• General-purpose transistor applications