MJE350 PNP Bipolar Power Transistor 300V 0.5A TO-126 (High Voltage PNP Transistor)

The MJE350 is a high-voltage PNP Bipolar Junction Transistor (BJT) designed for switching, amplification, and driver applications. Featuring a 300V collector-emitter voltage rating, 0.5A continuous collector current, and 20W power dissipation (with an adequate heatsink), it delivers reliable performance in high-voltage electronic circuits. Packaged in a TO-126 (TO-225) through-hole package, the MJE350 is widely used in audio amplifiers, voltage regulators, power supplies, industrial control circuits, and complementary transistor designs with the MJE340.

Key Features -

• High-voltage PNP Bipolar Junction Transistor

• Collector-emitter voltage rating of 300V

• Continuous collector current of 0.5A

• Power dissipation up to 20W with proper heatsink

• DC current gain (hFE) from 30 to 240

• Typical transition frequency of 4MHz

• Wide operating temperature range of -65°C to +150°C

• RoHS compliant and environmentally friendly

Specifications -

• Product Type - PNP Bipolar Power Transistor

• Part Number - MJE350

• Transistor Type - PNP

• Package - TO-225 / TO-126

• Mounting Type - Through Hole

• Collector-Emitter Voltage (VCEO) - 300V

• Collector-Base Voltage (VCBO) - 300V

• Emitter-Base Voltage (VEBO) - 5V

• Continuous Collector Current (IC) - 0.5A

• Power Dissipation (PD) - Up to 20W (with heatsink)

• DC Current Gain (hFE) - 30–240

• Transition Frequency (fT) - 4MHz (Typical)

• Operating Temperature Range - -65°C to +150°C

• RoHS Compliant - Yes

Applications -

• Audio amplifier output and driver stages

• High-voltage switching circuits

• Voltage regulator circuits

• Switch Mode Power Supplies (SMPS)

• Industrial control equipment

• Motor driver circuits

• Power management systems

• General-purpose amplification and switching

• Complementary transistor circuits with MJE340