SL17N06DN1 N-Channel Power MOSFET 60V 17A (Low RDS(ON) Power Switching MOSFET)

The SL17N06DN1 is a high-performance N-Channel Power MOSFET designed for efficient power switching applications. With a drain-to-source voltage rating of 60V, continuous drain current of 17A, and ultra-low ON-state resistance, it delivers excellent efficiency, low conduction losses, and reliable operation. Its high-density cell design, enhanced dv/dt capability, and high avalanche energy make it suitable for switching power supplies, motor control, battery management systems, and industrial power electronics.

Key Features -

• N-Channel enhancement mode Power MOSFET

• 60V drain-to-source voltage (VDS)

• 17A continuous drain current (ID)

• Ultra-low RDS(ON) of less than 73mΩ at VGS = 10V

• High-density cell structure for improved efficiency

• Enhanced dv/dt capability

• High avalanche energy (EAS)

• Excellent thermal performance

• Low power dissipation during switching

• Suitable for high-speed switching applications

Specifications -

• Product Type - N-Channel Power MOSFET

• Model - SL17N06DN1

• Channel Type - N-Channel

• Drain-to-Source Voltage (VDS) - 60V

• Continuous Drain Current (ID) - 17A

• Gate-to-Source Drive Voltage (Test) - 10V

• ON-State Resistance RDS(ON) - <73mΩ @ VGS = 10V

• Technology - High-Density Cell Design

• Avalanche Capability - High EAS

• dv/dt Capability - Enhanced

• Mounting Type - Through Hole

• Package Type - TO-252/DPAK or as per supplied variant

Applications -

• Switching power supplies

• DC-DC converters

• Battery management systems

• Motor drivers

• Brushless Direct Current motor control

• LED lighting drivers

• Solar power systems

• Inverters

• Industrial automation equipment

• Power management circuits