TIP35C NPN Power Amplifier Transistor 100V 25A TO-247-3 (125W High Power BJT)

TIP35C NPN Power Amplifier Transistor 100V 25A TO-247-3 (125W High Power BJT)

Key Features -

• High-power NPN bipolar junction transistor

• Maximum collector-emitter voltage of 100V

• Continuous collector current up to 25A

• Power dissipation up to 125W

• Suitable for high-current power amplifier and switching applications

• Through-hole TO-247-3 package

Specifications -

• Manufacturer Part No: TIP35C

• Series: TIP35C

• Product Type: BJTs – Bipolar Transistors

• Transistor Polarity: NPN

• Configuration: Single

• Collector-Emitter Voltage VCEO Max: 100V

• Collector-Base Voltage VCBO: 100V

• Emitter-Base Voltage VEBO: 5V

• Collector-Emitter Saturation Voltage: 1.8V

• Maximum DC Collector Current: 25A

• Continuous Collector Current: 25A

• Power Dissipation: 125W

• Gain Bandwidth Product fT: 3MHz

• Operating Temperature: Up to +150°C

• Brand: STMicroelectronics

• Mounting Style: Through Hole

• Package/Case: TO-247-3

Applications -

• Audio power amplifiers

• High-power switching circuits

• Motor control circuits

• Power supply circuits

• Voltage regulator circuits

• Industrial power control systems

• High-current driver circuits