MMBT5551 NPN Bipolar Transistor BJT 160V 600mA 3Pin SOT-23 (High Voltage SMD Switching Transistor for Electronic Circuits)

The MMBT5551 NPN Bipolar Transistor is designed for high voltage switching and amplification applications in compact electronic circuits. It provides reliable signal amplification, fast switching response, and stable performance in consumer and industrial electronics.

Key Features -

• High voltage NPN bipolar transistor design

• Compact SOT-23 surface mount package

• Supports collector emitter voltage up to 160V

• Fast switching and signal amplification capability

• Low collector emitter saturation voltage

• Suitable for compact PCB applications

Specifications -

• Product type - NPN Bipolar Junction Transistor

• Model - MMBT5551

• Package type - SOT-23

• Mounting type - Surface Mount Device

• Voltage rating - Collector Emitter Voltage 160V

• Current rating - Maximum Collector Current 150mA

• Frequency - Suitable for switching and amplification circuits

• Material - Silicon Semiconductor

• Additional features - Collector Base Voltage 180V, Emitter Base Voltage 6V, Power Dissipation 300mW, Low saturation voltage 200mV

Applications -

• High voltage switching circuits

• Signal amplification systems

• Consumer electronic devices

• Industrial control circuits

• Communication and interface circuits