MJD3055 60V 10A NPN TO-252-2 (DPAK) Bipolar Transistor (Power Transistor for Switching and Amplifier Applications)

The MJD3055 NPN Bipolar Junction Transistor is designed for high current switching and amplification applications in power control circuits. It provides reliable performance, high current capability, and efficient operation in industrial and electronic systems.

Key Features -

• NPN Bipolar Junction Transistor design

• High collector current capability up to 10A

• TO-252-2 (DPAK) surface mount package

• Suitable for power switching applications

• High power dissipation capability

• Reliable performance for industrial applications

Specifications -

• Product type - Bipolar Junction Transistor (BJT)

• Model - MJD3055

• Package type - TO-252-2 (DPAK)

• Mounting type - Surface Mount Device (SMD)

• Voltage rating - 60V Collector Emitter Voltage

• Current rating - 10A Collector Current

• Frequency - Suitable for switching and amplification circuits

• Material - Silicon Semiconductor

• Additional features - NPN polarity, power dissipation up to 115W, gain 20 @ 4A, 4V, compact DPAK package

Applications -

• Power switching circuits

• Motor driver applications

• Voltage regulator circuits

• Industrial control systems

• Power amplifier circuits