DS1245Y 1024k Nonvolatile SRAM (NV SRAM) DIP-32 (DS1245Y IC)
The DS1245Y is a high-density, 1,048,576-bit fully static nonvolatile SRAM organized as 131,072 words by 8 bits. Housed in a standard 32-pin DIP module, it integrates a self-contained lithium energy source and control circuitry to ensure data integrity without external power. The device constantly monitors the incoming supply voltage (VCC); upon detecting an out-of-tolerance condition, it automatically switches to the internal battery and enables unconditional write protection to prevent data corruption. With a minimum data retention life of 10 years and unlimited write cycles, the DS1245Y is a superior, high-speed alternative to EEPROM or Flash memory for mission-critical data storage.
This IC is primarily used in industrial automation, telecommunications, and high-end computing for storing system parameters, operational logs, and configuration data. It is a premium choice for professional electronics projects in India for building DIY industrial-grade data loggers, robust server-side cache modules, and embedded systems that require fast, parallel 8-bit access and long-term data persistence in a 32-pin through-hole package.
Key Features
- 10-Year Data Retention: Guaranteed minimum data life in the absence of external power.
- Unlimited Write Cycles: No wear-out mechanism, unlike standard Flash or EEPROM.
- Integrated Power Management: Automatic battery switching and write protection during power loss.
- Drop-in Replacement: Directly replaces standard 128k x 8 volatile static RAMs.
- High Performance: Fast read and write access times as low as 70ns.
- Freshness Seal: Internal lithium source is electrically disconnected until first power-up to ensure maximum shelf life.
- Low-Power CMOS: Efficient power consumption during active and standby modes.
- JEDEC Standard Footprint: Conforms to the popular 32-pin bytewide DIP standard.
Specifications
- IC Type: Nonvolatile Static RAM (NV SRAM)
- Density: 1024Kbit (1Mbit)
- Organization: 128K x 8 bits
- Supply Voltage (VCC): 4.5V to 5.5V
- Write Protection Voltage: 4.25V to 4.5V
- Access Time: 70ns / 85ns / 100ns (Variant dependent)
- Operating Current: 85mA (Max)
- Standby Current: 600uA (Typical)
- Package Type: EDIP-32 (Encapsulated DIP)
- Number of Pins: 32
- Mounting Type: Through-Hole
- Operating Temperature: 0 to 70 degrees Celsius (Standard)
Interfaces
- Pin 1 (A14): Address Input 14
- Pin 2 (A12): Address Input 12
- Pin 3 (A7): Address Input 7
- Pin 4 (A6): Address Input 6
- Pin 5 (A5): Address Input 5
- Pin 6 (A4): Address Input 4
- Pin 7 (A3): Address Input 3
- Pin 8 (A2): Address Input 2
- Pin 9 (A1): Address Input 1
- Pin 10 (A0): Address Input 0
- Pin 11–13 (DQ0–DQ2): Data Input/Output 0 to 2
- Pin 14 (GND): Ground
- Pin 15–19 (DQ3–DQ7): Data Input/Output 3 to 7
- Pin 20 (CE): Chip Enable (Active Low)
- Pin 21 (A10): Address Input 10
- Pin 22 (OE): Output Enable (Active Low)
- Pin 23 (A11): Address Input 11
- Pin 24 (A9): Address Input 9
- Pin 25 (A8): Address Input 8
- Pin 26 (A13): Address Input 13
- Pin 27 (WE): Write Enable (Active Low)
- Pin 28 (A16): Address Input 16
- Pin 29 (A15): Address Input 15
- Pin 30 (VCC): Positive Supply Voltage (+5V)
- Pin 31 (A17): Address Input 17 (Not used on 1M model, for higher densities)
- Pin 32 (VCC): Positive Supply Voltage (Alternative)
